80 V, 100 mA per diode — small-signal switching array in US6
With a 4 ns reverse recovery time, this array is suited for high-speed switching tasks in signal conditioning, protection clamping, and logic-level translation circuits. The 500 nA maximum reverse leakage at 80 V and 1.2 V forward drop at 100 mA define the static losses for low-power designs.
US6 package — footprint and thermal considerations
The junction temperature is rated to 125 °C maximum; thermal performance depends on PCB copper area and airflow in the end application.