80 V, 100 mA per diode — small-signal switching array in US6
The Toshiba HN1D01FU,LF(T is a general-purpose diode array containing two pairs of diodes with a common anode configuration, each rated for 80 V reverse voltage and 100 mA average rectified current. With a 4 ns reverse recovery time, this array is suited for high-speed switching tasks in signal conditioning, protection clamping, and logic-level translation circuits. The 500 nA maximum reverse leakage at 80 V and 1.2 V forward drop at 100 mA define the static losses for low-power designs.
US6 package — footprint and thermal considerations
Housed in the 6-pin US6 package (SC-88 / SOT-363 variant), this surface-mount array occupies minimal board area and is compatible with standard reflow profiles. The junction temperature is rated to 125 °C maximum; thermal performance depends on PCB copper area and airflow in the end application.