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Toshiba Semiconductor HN1C01FU-Y,LF

Toshiba Semiconductor HN1C01FU-Y,LF

MPNHN1C01FU-Y,LF
End of Life

NPN + NPN IND. TRANSISTOR VCEO50

$0.26Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HN1C01FU-Y,LF specifications
ParameterValue
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 2mA, 6V
Power - max200mW
Frequency - transition80MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA