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Toshiba Semiconductor HN1B01FU-GR,LF — Discrete Semiconductors

Toshiba HN1B01FU-GR,LF NPN/PNP Transistor, 150mA, 50V, US6

MPNHN1B01FU-GR,LF
End of Life

Toshiba Semiconductor HN1B01FU-GR,LF dual NPN/PNP general-purpose transistor, 50V Vce, 150mA Ic, 150MHz ft, 200mW/210mW power, US6 surface-mount package.

$0.33Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

HN1B01FU-GR,LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max200mW, 210mW
Frequency150MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA

Product details

Dual-transistor array for compact biasing and signal switching

The HN1B01FU-GR,LF integrates one NPN and one PNP transistor in a single US6 (SOT-363) package, rated for 50 V collector-emitter breakdown and 150 mA continuous collector current per side. Minimum DC current gain of 200 at 2 mA, 6 V ensures consistent drive in low-current switching and amplifier stages where beta matching between the complementary pair matters.

Package and board-fit for high-density assembly

The 6-TSSOP, SC-88, SOT-363 footprint (supplier device package US6) is a standard 1.25 mm × 2.0 mm body with 0.65 mm lead pitch — it places without tombstoning on a standard reflow profile and shares land patterns with many dual-transistor parts.

Active lifecycle and compliance documentation

ROHS3 compliant per, with a maximum junction temperature rating of 125 °C, suiting it for consumer, industrial, and telecom environments where lead-free assembly and moderate ambient heat are standard.

Frequently asked questions

What is the closest functional second-source to HN1B01FU-GR,LF?

The HN1B04FU-Y,LF is a peer dual NPN/PNP transistor in the same US6 package with identical 50 V breakdown and 150 mA collector current, but its Vce saturation at 10 mA, 100 mA is 300 mV max versus 250 mV for this part — the HN1B01FU-GR,LF offers slightly lower on-state loss at the same drive condition.

Will HN1B01FU-GR,LF drop into a board designed for HN1B04FU-Y,LF?

Yes — both share the same US6 (SOT-363) footprint and pinout for a dual NPN/PNP complementary pair. The slightly lower Vce(sat) of the HN1B01FU-GR,LF means it can replace the HN1B04FU-Y,LF without rewiring or layout changes.