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Toshiba Semiconductor CRS20I40A(TE85L,QM

CRS20I40A(TE85L,QM Schottky Diode, 40V 2A, SOD-123F

MPNCRS20I40A(TE85L,QM
End of Life

Toshiba CRS20I40A(TE85L,QM Schottky diode, 40 V reverse, 2 A forward, 600 mV Vf at 2 A, SOD-123F surface-mount package, fast recovery ≤500 ns, ROHS3 compliant.

$0.52Ref. price · indicative, final on quote
PackagingSOD-123F
StockContact for availability
MOQ1 pcs
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Specifications

CRS20I40A(TE85L,QM Technical Specifications
ParameterValue
Diode typeSchottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if600 mV @ 2 A
Current - reverse leakage @ vr60 µA @ 40 V
Current - average rectified2A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-123F
Capacitance @ vr, f35pF @ 10V, 1MHz

Product details

Schottky barrier, 40 V blocking, 2 A forward — the conduction loss floor

The CRS20I40A(TE85L,QM: The CRS20I40A is a 40 V, 2 A Schottky rectifier in a SOD-123F surface-mount package.

Fast recovery and junction temperature ceiling

Recovery time is specified as ≤500 ns at >200 mA forward current — fast enough for switching supplies in the 50–100 kHz range where reverse-recovery losses in a standard rectifier would hurt efficiency. The maximum junction temperature is 150 °C, so the thermal design must keep Tj below that at the worst-case ambient plus self-heating.

Reverse leakage and capacitance — the off-state trade-offs

Reverse leakage is 60 µA at 40 V — typical for a 40 V Schottky. At elevated junction temperature leakage rises exponentially, so a design running near 150 °C should budget for higher standby loss. Junction capacitance is 35 pF at 10 V, 1 MHz — low enough that switching losses from capacitive discharge are negligible at moderate frequencies.

Frequently asked questions

What is the maximum junction temperature of CRS20I40A?

The maximum junction temperature is 150 °C.

Can CRS20I40A be used for reverse polarity protection?

Yes, a 40 V, 2 A Schottky is suitable for reverse-polarity protection on a 12 V or 24 V DC rail. The 600 mV forward drop at 2 A is higher than a P-channel MOSFET solution, but the diode is simpler and the leakage at reverse bias is low enough not to load the protected circuit.