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Toshiba Semiconductor BAS516,L3F

Toshiba Semiconductor BAS516,L3F

MPNBAS516,L3F
End of Life

DIODE GEN PURP 100V 250MA ESC

$1.18Ref. price · indicative, final on quote
PackagingSC-79, SOD-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS516,L3F specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr200 nA @ 80 V
Current - average rectified250mA
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSC-79, SOD-523
Capacitance @ vr,0.35pF @ 0V, 1MHz
Reverse recovery time3 ns