BAS316~6H3F
Toshiba Semiconductor BAS316,H3F
MPNBAS316,H3F
End of Life
DIODE GEN PURP 100V 250MA USC
$0.23304Price · pay online now
$0.23 / ea · total $1.15
242 in stock — maximum per order · MOQ 5 · 3–4 days lead time
$0.19 / ea from 50 pcs
PackagingSC-76, SOD-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 1.25 V @ 150 mA |
| Current - reverse leakage @ vr | 200 nA @ 80 V |
| Current - average rectified | 250mA |
| Operating temperature - junction | 150°C (Max) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | SC-76, SOD-323 |
| Capacitance @ vr, | 0.35pF @ 0V, 1MHz |
| Reverse recovery time | 3 ns |