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Toshiba Semiconductor 1SS403,H3F

Toshiba Semiconductor 1SS403,H3F

MPN1SS403,H3F
End of Life

DIODE GEN PURP 200V 100MA USC

$0.38Ref. price · indicative, final on quote
PackagingSC-76, SOD-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1SS403,H3F specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr1 µA @ 200 V
Current - average rectified100mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-76, SOD-323
Capacitance @ vr,3pF @ 0V, 1MHz
Reverse recovery time60 ns