1SS307(TE85L,F)

Toshiba Semiconductor

DIODE GEN PURP 30V 100MA S-MINI

Toshiba Semiconductor 1SS307(TE85L,F)
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1SS307(TE85L,F) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 100 mA
Current - reverse leakage @ vr10 nA @ 30 V
Current - average rectified100mA
Operating temperature - junction125°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,6pF @ 0V, 1MHz
1SS307(TE85L,F)
[ALLOC] verified
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