Toshiba Semiconductor 1SS307(TE85L,F)
MPN1SS307(TE85L,F)
End of Life
DIODE GEN PURP 30V 100MA S-MINI
$0.36Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 30 V |
| Voltage - forward (Vf) (Max) @ if | 1.3 V @ 100 mA |
| Current - reverse leakage @ vr | 10 nA @ 30 V |
| Current - average rectified | 100mA |
| Operating temperature - junction | 125°C (Max) |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Capacitance @ vr, | 6pF @ 0V, 1MHz |