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Toshiba Semiconductor 1SS307E,L3F

1SS307E,L3F - Toshiba Semiconductor

MPN1SS307E,L3F
End of Life

DIODE GEN PURP 80V 100MA SC79

$0.19Ref. price · indicative, final on quote
PackagingSC-79, SOD-523
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1SS307E,L3F specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 100 mA
Current - reverse leakage @ vr10 nA @ 80 V
Current - average rectified100mA
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseSC-79, SOD-523
Capacitance @ vr,6pF @ 0V, 1MHz