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Toshiba Semiconductor and Storage 2SK879 Series

2 variants · Toshiba Semiconductor and Storage

About the Toshiba Semiconductor and Storage 2SK879 Series

The Toshiba Semiconductor and Storage 2SK879 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of SC-70, SOT-323, FET type of N-Channel and input capacitance (Ciss) (Max) @ vds of 8.2pF @ 10V. Variants differ by current - drain (Idss) @ vds (Vgs=0), operating temperature and package, so you can match the exact current - drain (Idss) @ vds (Vgs=0) your application requires using the selection guide below. All listed Toshiba Semiconductor and Storage 2SK879 Series part numbers are active and orderable.

Select a variant by

Current - drain (Idss) @ vds (Vgs=0)
1.2 mA @ 10 V · 2.6 mA @ 10 V
Operating temperature
125°C (TJ) · 125°C(TJ)
Package
Tape & Reel (TR) Cut Tape (CT) · Tape & Reel (TR); Cut Tape (CT)

Shared specifications

Case
SC-70, SOT-323
FET type
N-Channel
Input capacitance (Ciss) (Max) @ vds
8.2pF @ 10V
Mounting
Surface Mount
Power - max
100 mW
Voltage - cutoff (VGS off) @ id
400 mV @ 100 nA

Variant comparison

Parameter2SK879-GR(TE85L,F)2SK879-Y(TE85L,F)
Current - drain (Idss) @ vds (Vgs=0)2.6 mA @ 10 V1.2 mA @ 10 V
Operating temperature125°C(TJ)125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)Tape & Reel (TR) Cut Tape (CT)

Request a quote on any Toshiba Semiconductor and Storage 2SK879 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants