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Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F) — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F)

MPN2SK879-Y(TE85L,F)
Active

JFET N-CH 0.1W USM

$0.4000Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK879-Y(TE85L,F) specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Voltage - cutoff (VGS off) @ id400 mV @ 100 nA
Current - drain (Idss) @ vds (Vgs=0)1.2 mA @ 10 V
Power - max100 mW
Operating temperature125°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-70, SOT-323
Input capacitance (Ciss) (Max) @ vds8.2pF @ 10V