2SK879-Y(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH 0.1W USM

Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F)
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[IN STOCK] In Stock: 1,500 pcs
$0.46/ pc

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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SK879-Y(TE85L,F) specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Voltage - cutoff (VGS off) @ id400 mV @ 100 nA
Current - drain (Idss) @ vds (Vgs=0)1.2 mA @ 10 V
Power - max100 mW
Operating temperature125°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-70, SOT-323
Input capacitance (Ciss) (Max) @ vds8.2pF @ 10V
2SK879-Y(TE85L,F)
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