Toshiba Semiconductor and Storage TPC8A06-H(TE12LQM)
MPNTPC8A06-H(TE12LQM)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Body) |
| Case | 8-SOIC (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 2.3V @ 1mA |
| Rds on (Max) @ id, vgs | 10.1mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 10 V |