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Toshiba Semiconductor and Storage TPC8405(TE12L,Q,M) — Discrete Semiconductors

Toshiba Semiconductor and Storage TPC8405(TE12L,Q,M)

MPNTPC8405(TE12L,Q,M)
Obsolete
$3.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPC8405(TE12L,Q,M) specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6A, 4.5A
Power - max450mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case8-SOIC (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs26mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs27nC @ 10V
Input capacitance (Ciss) (Max) @ vds1240pF @ 10V