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Toshiba Semiconductor and Storage TPC8223-H,LQ(S — Discrete Semiconductors

Toshiba Semiconductor and Storage TPC8223-H,LQ(S

MPNTPC8223-H,LQ(S
Obsolete
$0.4500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPC8223-H,LQ(S specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C9A
Power - max450mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.3V @ 100µA
Rds on (Max) @ id, vgs17mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs17nC @ 10V
Input capacitance (Ciss) (Max) @ vds1190pF @ 10V