Toshiba Semiconductor and Storage TPC8208(TE12L,Q,M)
MPNTPC8208(TE12L,Q,M)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5A |
| Power - max | 450mW |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 1.2V @ 200µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 2.5A, 4V |
| Gate charge (Qg) (Max) @ vgs | 9.5nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 780pF @ 10V |