Toshiba Semiconductor and Storage TPC8115(TE12L,Q,M)
MPNTPC8115(TE12L,Q,M)
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIV |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 1.2V @ 200µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 115 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 9130 pF @ 10 V |