Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M)
MPNTPC8110(TE12L,Q,M)
Obsolete
$0.9200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 25mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2180 pF @ 10 V |