Toshiba Semiconductor and Storage TPC8109(TE12L)
MPNTPC8109(TE12L)
Obsolete
$0.8700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Package | Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 20mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2260 pF @ 10 V |