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Toshiba Semiconductor and Storage TPC8067-H,LQ(S — Discrete Semiconductors

Toshiba Semiconductor and Storage TPC8067-H,LQ(S

MPNTPC8067-H,LQ(S
Obsolete
$0.3600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPC8067-H,LQ(S specifications
ParameterValue
SeriesU-MOSVII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.3V @ 100µA
Rds on (Max) @ id, vgs25mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs9.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds690 pF @ 10 V