2SC6139~6T2F~1M
Toshiba Semiconductor and Storage 2SC6139,T2F(M
MPN2SC6139,T2F(M
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 160 V |
| Current - collector (Ic) | 1.5 A |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 140 @ 100mA, 5V |
| Power - max | 1 W |
| Frequency - transition | 100MHz |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Case | SC-71 |
| Vce saturation (Max) @ ib, ic | 500mV @ 50mA, 500mA |