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Toshiba Semiconductor and Storage 2SC6 Series

3 variants · Toshiba Semiconductor and Storage

About the Toshiba Semiconductor and Storage 2SC6 Series

The Toshiba Semiconductor and Storage 2SC6 Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of 3-SMD, Flat Leads, current - collector cutoff of 100nA (ICBO) and FET type of NPN. Variants differ by current - collector (Ic), DC current gain (hFE) (Min) @ ic, vce and vce saturation (Max) @ ib, ic, so you can match the exact current - collector (Ic) your application requires using the selection guide below.

Select a variant by

Current - collector (Ic)
1 A · 2.5 A
DC current gain (hFE) (Min) @ ic, vce
400 @ 100mA, 2V · 400 @ 300mA, 2V
Vce saturation (Max) @ ib, ic
120mV @ 6mA, 300mA · 140mV @ 20mA, 1A

Shared specifications

Case
3-SMD, Flat Leads
Current - collector cutoff
100nA (ICBO)
FET type
NPN
Frequency
-
Mounting
Surface Mount
Operating temperature
150°C (TJ)
Package
Tape & Reel (TR) Cut Tape (CT)
Power - max
500 mW
Voltage - collector emitter breakdown
50 V

Variant comparison

Parameter2SC6135,LF2SC6100,LF
Current - collector (Ic)1 A2.5 A
DC current gain (hFE) (Min) @ ic, vce400 @ 100mA, 2V400 @ 300mA, 2V
Vce saturation (Max) @ ib, ic120mV @ 6mA, 300mA140mV @ 20mA, 1A

Request a quote on any Toshiba Semiconductor and Storage 2SC6 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants