10A peak gate drive with capacitive isolation
That 10A, 10A rating means it can drive the gate capacitance of medium-power IGBTs and SiC MOSFETs without an external booster stage — the rise and fall times sit at 10ns typical, which keeps switching losses in check for hard-switched converters running in the tens to low hundreds of kHz. The output supply range spans 13.2V to 33V, covering the standard +15V and +20V gate drive rails used in motor drives and industrial power supplies.
The 3000Vrms isolation rating provides basic insulation for equipment in the 600V class — think VFDs, servo drives, and UPS systems where the control side needs to sit on the low-voltage side of the isolation barrier. The 100kV/µs common-mode transient immunity is the spec that matters when the driver is paired with fast-switching wide-bandgap devices: a GaN FET switching at 100V/ns will couple a transient across the barrier, and if the driver's CMTI is too low, the output glitches and the half-bridge shoots through. At 100kV/µs minimum, this part handles the edge rates from SiC and GaN without extra filtering. Matched propagation delays of 65ns max and pulse-width distortion of 20ns max simplify dead-time calculations — you can budget a tighter margin than with a driver that has asymmetric delays.
Package and approvals for production
Housed in the standard 8-SOIC footprint with 3.90mm body width, the UCC5390SCDR fits the same land pattern as many optocoupler-based drivers, making it a drop-in replacement for designs migrating from opto to capacitive isolation. The surface-mount package suits automated assembly lines. Approval agency listings include CQC, CSA, UR, and VDE — covering the main safety certifications for industrial and appliance power electronics shipped into North America, Europe, and China.