Capacitive-coupled isolated gate driver for SiC and IGBT gates
It is designed to drive power switches such as SiC MOSFETs and IGBTs in motor drives, industrial power supplies, and solar inverters, where fast switching and high noise immunity are required. The driver provides a peak output current of 4.3A, with 2.4A source and 2.2A sink capability, enough to charge and discharge the gate capacitance of medium-power SiC and IGBT devices at switching frequencies up to several hundred kilohertz. Rise and fall times are 12 ns and 10 ns typical, respectively, with propagation delays of 72 ns (low-to-high) and 75 ns (high-to-low) maximum, keeping dead-time margins tight. The common-mode transient immunity (CMTI) is rated at a minimum of 100 kV/µs, which is essential for maintaining signal integrity in high-side gate drive applications where the output side sees fast voltage swings relative to ground. The supply voltage range of 13.2V to 33V on the output side accommodates standard gate drive rails for SiC (typically 15V to 20V) and IGBTs (15V to 30V).
Package and approvals
The UCC5320SCD is housed in an 8-pin SOIC package (8-SOIC, 3.90 mm width) and is supplied in Tube form. It carries approvals from CQC, CSA, UR, and VDE, covering safety standards for reinforced isolation in equipment up to 3000Vrms.