Single-channel isolated gate driver for SiC and IGBT
It is rated for a 10A peak output current, which makes it suited for driving SiC MOSFETs and high-power IGBT modules in traction inverters, on-board chargers, and industrial motor drives.
A 10A peak output (sink and source symmetric) lets this driver charge and discharge the gate capacitance of large SiC or IGBT modules quickly, reducing switching losses. The 33ns rise and 27ns fall times (typical) keep the transition window tight. Propagation delay is matched at 130ns max for both edges, and pulse width distortion is held to 30ns max — important for dead-time accuracy in half-bridge topologies. The 150V/ns minimum common mode transient immunity means the output stays clean when the switching node slews at hundreds of volts per nanosecond, a common condition in fast-switching inverters.
Supply range and isolation coordination
The output-side supply range of 13V to 33V covers standard gate-drive voltages for IGBTs (15V) and SiC MOSFETs (18V to 20V), with headroom for desaturation detection circuits that need a higher bias. The input side is powered from the controller-side rail; the capacitive isolation barrier handles 5700Vrms, which meets reinforced insulation requirements per VDE approval. The 16-SOIC wide-body footprint provides the creepage distance needed for high-voltage system segregation.
Lifecycle and sourcing
It is a current-production part from Texas Instruments, available through independent distribution. No last-time-buy or obsolescence risk is indicated on the current record.