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Texas Instruments TPS51601ADRBT — Power Management (PMIC / Gate Driver)

TPS51601ADRBT Half-Bridge Gate Driver, 15ns/10ns, 8-SON

MPNTPS51601ADRBT
End of Life

Texas Instruments TPS51601ADRBT, half-bridge gate driver, N-Channel MOSFET, synchronous, 2 drivers, 4.5V~5.5V supply, 15ns rise / 10ns fall, -40°C~105°C, 8-VDFN Exposed Pad / 8-SON (3x3), Surface Mount.

$1.77Ref. price · indicative, final on quote
Packaging8-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

TPS51601ADRBT specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Voltage4.5V ~ 5.5V
Logic voltage - VIL, VIH0.7V, 4V
Operating temperature-40°C ~ 105°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-VDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)15ns, 10ns

Product details

Half-bridge driver for synchronous N-channel bucks

It accepts a non-inverting input and delivers a 15 ns typical rise time and 10 ns fall time into the gate load, which sets the practical dead-time window for high-frequency switching. The 4.5 V to 5.5 V supply rail matches the bias from a typical PWM controller or a local 5 V regulator, so the BOM needs to budget that rail separately from the 12 V bootstrap supply for the high-side driver.

With a 15 ns rise and 10 ns fall, the driver can charge and discharge the MOSFET gate quickly enough to keep switching losses low at frequencies up to several hundred kilohertz. The asymmetry — faster fall than rise — is intentional for synchronous bucks: the low-side FET turns off faster to prevent cross-conduction during the dead-time interval. The logic input thresholds (VIL 0.7 V, VIH 4.0 V) are compatible with 5 V PWM controllers; they also accept 3.3 V logic if the high-level output of the controller exceeds 4.0 V, which some do not — check the controller's VOH against the 4.0 V VIH spec.

Package and thermal: 8-SON (3x3) with exposed pad

The TPS51601ADRBT comes in an 8-VDFN with exposed pad, also described as an 8-SON (3x3). Without that thermal via pattern, the junction temperature rises quickly above 400 mA continuous gate drive current.

No LTB risk, no forced redesign for a drop-in replacement.

Frequently asked questions

What is the closest functional alternative to TPS51601ADRBT?

A functional peer is the LM5106MM/NOPB, also a half-bridge N-channel MOSFET driver with similar 15 ns rise / 10 ns fall times and two drivers. The key difference is supply voltage: the LM5106 operates at 8.0 V minimum versus the TPS51601's 4.5 V to 5.5 V range, so a BOM designed around a 5 V bias rail would need a boost regulator or a different controller to use the LM5106. The LM5106 also extends the temperature range to 125°C, which may help in higher-temperature environments.