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Texas Instruments TPS51601ADRBT — Analog & Data Acquisition

TPS51601ADRBT Half-Bridge Gate Driver, 15ns/10ns, 8-SON

MPNTPS51601ADRBT
End of Life

Texas Instruments TPS51601ADRBT, half-bridge gate driver, N-Channel MOSFET, synchronous, 2 drivers, 4.5V~5.5V supply, 15ns rise / 10ns fall, -40°C~105°C, 8-VDFN Exposed Pad / 8-SON (3x3), Surface Mount.

$1.77Ref. price · indicative, final on quote
Packaging8-VDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

TPS51601ADRBT Technical Specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
Mounting typeSurface Mount
Voltage4.5V ~ 5.5V
Logic voltage - VIL, VIH0.7V, 4V
Operating temperature-40°C ~ 105°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-VDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)15ns, 10ns

Product details

Half-bridge driver for synchronous N-channel bucks

The Texas Instruments TPS51601ADRBT is a half-bridge gate driver designed to drive two N-channel MOSFETs in a synchronous buck converter topology. It accepts a non-inverting input and delivers a 15 ns typical rise time and 10 ns fall time into the gate load, which sets the practical dead-time window for high-frequency switching. The 4.5 V to 5.5 V supply rail matches the bias from a typical PWM controller or a local 5 V regulator, so the BOM needs to budget that rail separately from the 12 V bootstrap supply for the high-side driver.

15 ns rise / 10 ns fall — what that means for the switching loop

With a 15 ns rise and 10 ns fall, the driver can charge and discharge the MOSFET gate quickly enough to keep switching losses low at frequencies up to several hundred kilohertz. The asymmetry — faster fall than rise — is intentional for synchronous bucks: the low-side FET turns off faster to prevent cross-conduction during the dead-time interval. The logic input thresholds (VIL 0.7 V, VIH 4.0 V) are compatible with 5 V PWM controllers; they also accept 3.3 V logic if the high-level output of the controller exceeds 4.0 V, which some do not — check the controller's VOH against the 4.0 V VIH spec.

Package and thermal: 8-SON (3x3) with exposed pad

The TPS51601ADRBT comes in an 8-VDFN with exposed pad, also described as an 8-SON (3x3). The small 3 mm × 3 mm footprint fits tight layouts, but the exposed pad must be soldered to a PCB copper plane and stitched with vias to the inner ground layer to carry heat away. Without that thermal via pattern, the junction temperature rises quickly above 400 mA continuous gate drive current. The part is rated for -40°C to 105°C junction temperature, which covers industrial environments — motor drives, telecom rectifiers, and outdoor power supplies — but not automotive under-hood (which typically needs 125°C or 150°C).

Lifecycle and sourcing reality

The TPS51601ADRBT carries an Active product status and ROHS3 compliance. No LTB risk, no forced redesign for a drop-in replacement.

Frequently asked questions

What is the closest functional alternative to TPS51601ADRBT?

A functional peer is the LM5106MM/NOPB, also a half-bridge N-channel MOSFET driver with similar 15 ns rise / 10 ns fall times and two drivers. The key difference is supply voltage: the LM5106 operates at 8.0 V minimum versus the TPS51601's 4.5 V to 5.5 V range, so a BOM designed around a 5 V bias rail would need a boost regulator or a different controller to use the LM5106. The LM5106 also extends the temperature range to 125°C, which may help in higher-temperature environments.