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Texas Instruments TPS28225DRBR — Analog & Data Acquisition
Texas Instruments

TPS28225DRBR MOSFET Driver, 2A Peak, Half-Bridge, 8-SON

MPNTPS28225DRBR
End of Life

Texas Instruments TPS28225DRBR half-bridge N-channel MOSFET driver, 2A peak output, 10ns rise/fall, 4.5V-8.8V supply, 33V bootstrap, -40 to 125°C, 8-SON (3x3) package.

$1.73Ref. price · indicative, final on quote
TPS28225DRBR datasheet
Packaging8-VDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TPS28225DRBR Technical Specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
Mounting typeSurface Mount
Voltage4.5V ~ 8.8V
High side voltage - max (Bootstrap)33 V
Current - peak output (Source, sink)2A, 2A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-VDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)10ns, 10ns

Product details

What this half-bridge driver delivers

The Texas Instruments TPS28225DRBR is a synchronous half-bridge gate driver designed for N-channel MOSFETs in a non-inverting configuration. It packs two drivers into an 8-SON (3x3 mm) exposed-pad package. Each channel delivers 2A peak source and sink current, with typical rise and fall times of 10 ns. The bootstrap diode supports a high-side voltage up to 33 V. Operating junction temperature spans -40°C to 125°C. The supply range is 4.5 V to 8.8 V.

Sourcing and lifecycle reality

The TPS28225DRBR carries an Active product status and is ROHS3 compliant. For a BOM line that needs a compact half-bridge driver with 2 A peak drive, this part is a clean fit for new designs — no LTB risk to budget for.

Package and handling notes

The 8-SON (3x3 mm) exposed-pad package requires a thermal via pattern under the pad for adequate heat sinking when driving continuous 2 A peaks. The part ships in Tape & Reel (TR) or Cut Tape (CT) options.

Frequently asked questions

What is the closest functional equivalent to TPS28225DRBR?

A close functional peer is the LM5106MM/NOPB — also a half-bridge N-channel MOSFET driver with non-inverting input and synchronous channel type. The LM5106 has a typical 8 V supply and 1.2 A peak output with 15 ns / 10 ns rise/fall times, versus the TPS28225's 2 A peak and 10 ns / 10 ns. The TPS28225 offers higher peak drive and faster edges for the same topology, but the LM5106 is a valid second-source candidate if the lower drive current fits the FETs.

Is TPS28225DRBR compatible with a 5V input?

Yes, the supply voltage range is 4.5 V to 8.8 V, so a 5 V bias rail is within spec. The driver will operate correctly with a 5 V supply, delivering the rated 2 A peak output.

What package does TPS28225DRBR come in?

It is offered in an 8-VDFN exposed-pad package (8-SON 3x3 mm), available in Tape & Reel (TR) or Cut Tape (CT).

What is the gate type for TPS28225DRBR?

It is designed to drive N-channel MOSFETs in a half-bridge configuration.