Texas Instruments
Texas Instruments TPS28225DRBR half-bridge N-channel MOSFET driver, 2A peak output, 10ns rise/fall, 4.5V-8.8V supply, 33V bootstrap, -40 to 125°C, 8-SON (3x3) package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Synchronous |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 8.8V |
| High side voltage - max (Bootstrap) | 33 V |
| Current - peak output (Source, sink) | 2A, 2A |
| Operating temperature | -40°C ~ 125°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-VDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 10ns, 10ns |
The Texas Instruments TPS28225DRBR is a synchronous half-bridge gate driver designed for N-channel MOSFETs in a non-inverting configuration. It packs two drivers into an 8-SON (3x3 mm) exposed-pad package. The bootstrap diode supports a high-side voltage up to 33 V.
