Texas Instruments TPS28225DRBR half-bridge N-channel MOSFET driver, 2A peak output, 10ns rise/fall, 4.5V-8.8V supply, 33V bootstrap, -40 to 125°C, 8-SON (3x3) package.
| Parameter | Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Synchronous |
| Mounting | Surface Mount |
| Voltage | 4.5V ~ 8.8V |
| High side voltage - max (Bootstrap) | 33 V |
| Current - peak output (Source, sink) | 2A, 2A |
| Operating temperature | -40°C ~ 125°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-VDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 10ns, 10ns |
The Texas Instruments TPS28225DRBR is a synchronous half-bridge gate driver designed for N-channel MOSFETs in a non-inverting configuration. It packs two drivers into an 8-SON (3x3 mm) exposed-pad package. The bootstrap diode supports a high-side voltage up to 33 V.
A close functional peer is the LM5106MM/NOPB — also a half-bridge N-channel MOSFET driver with non-inverting input and synchronous channel type. The LM5106 has a typical 8 V supply and 1.2 A peak output with 15 ns / 10 ns rise/fall times, versus the TPS28225's 2 A peak and 10 ns / 10 ns. The TPS28225 offers higher peak drive and faster edges for the same topology, but the LM5106 is a valid second-source candidate if the lower drive current fits the FETs.
Yes, the supply voltage range is 4.5 V to 8.8 V, so a 5 V bias rail is within spec. The driver will operate correctly with a 5 V supply, delivering the rated 2 A peak output.
It is offered in an 8-VDFN exposed-pad package (8-SON 3x3 mm), available in Tape & Reel (TR) or Cut Tape (CT).
It is designed to drive N-channel MOSFETs in a half-bridge configuration.