Texas Instruments TPS1120DR, dual P-channel MOSFET, 15V Vdss, 1.17A continuous drain current, 180mOhm Rds(on) at 1.5A/10V, logic-level gate, 8-SOIC surface-mount package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | 2 P-Channel (Dual) |
| Mounting type | Surface Mount |
| Drain to source voltage | 15V |
| Current - continuous drain (Id) @ 25°C | 1.17A |
| Power - max | 840mW |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.45nC @ 10V |
Junction temperature range is -40°C to 150°C. Total package dissipation is 840mW.
ROHS3 compliant. No second-source or direct replacement is listed in the available documentation, so for dual-sourcing requirements, qualification of an alternate part would need to be done independently.
Yes, TPS1120DR is ROHS3 compliant.
Yes, the TPS1120DR contains two independent P-channel MOSFETs, so one channel can replace a single P-channel device. The unused channel can be left floating or tied off, provided the total package dissipation (840mW) is respected.