P-channel load switch in an 8-TSSOP — 15 V, 1.27 A, 180 mOhm
The Texas Instruments TPS1100PW is a P-channel enhancement-mode MOSFET built on the standard metal-oxide semiconductor process. It handles a drain-source voltage up to 15 V and a continuous drain current of 1.27 A at 25 °C ambient. The gate threshold voltage is 1.5 V maximum at 250 µA drain current, meaning a logic-level gate drive from 2.7 V onward can start turning the device on, though the rated Rds(on) is specified at 10 V. Total gate charge is 5.45 nC at 10 V — low enough that a standard GPIO or a small dedicated gate-driver IC can switch it without significant drive-current budget.
Maximum power dissipation is 504 mW at 25 °C ambient; derate above that per the junction-to-ambient thermal resistance of the 8-TSSOP package. The small footprint limits heat sinking to the copper pad area on the PCB.
No official second-source or pin-compatible alternate is listed in the manufacturer cross-reference data.