Dual-rail driver for through-hole designs
The Texas Instruments SN75372P is a dual low-side N-channel MOSFET gate driver in an 8-pin through-hole DIP package. It drives two independent low-side N-channel MOSFETs with 500mA peak source and sink current capability.
500mA symmetric drive — sizing the FET
The 500mA peak source and 500mA peak sink rating is symmetric, which simplifies gate drive timing calculations. For a given MOSFET's total gate charge (Qg), this drive current determines the minimum switching time and the switching losses. A FET with Qg around 50nC will switch in roughly 100ns at 500mA — adequate for low-to-medium frequency power converters and motor pre-drive stages. The symmetric drive also means turn-on and turn-off edges are balanced, reducing dead-time asymmetry in half-bridge or synchronous rectifier topologies.
Active lifecycle, no LTB pressure
The SN75372P carries an active lifecycle status per the manufacturer, with ROHS3 compliance. There is no last-time-buy notice or end-of-life risk for current designs. The through-hole DIP variant has been a stable catalog item for years — no surprise obsolescence expected. For production planning, this part is a safe choice for new BOMs that need a through-hole low-side driver.
Sourcing and availability
The SN75372P is sourced through independent distribution channels. This is not a hard-to-find obsolete part — the active status means it moves through standard replenishment. For BOM qualification, the through-hole package and commercial temperature range are the primary fit gates; the dual-rail supply architecture is the secondary check against your power tree.