Dual-rail driver for through-hole designs
It drives two independent low-side N-channel MOSFETs with 500mA peak source and sink current capability.
500mA symmetric drive — sizing the FET
The 500mA peak source and 500mA peak sink rating is symmetric, which simplifies gate drive timing calculations. For a given MOSFET's total gate charge (Qg), this drive current determines the minimum switching time and the switching losses. A FET with Qg around 50nC will switch in roughly 100ns at 500mA — adequate for low-to-medium frequency power converters and motor pre-drive stages. The symmetric drive also means turn-on and turn-off edges are balanced, reducing dead-time asymmetry in half-bridge or synchronous rectifier topologies.
The through-hole DIP variant has been a stable catalog item for years — no surprise obsolescence expected.
This is not a hard-to-find obsolete part — the active status means it moves through standard replenishment. For BOM qualification, the through-hole package and commercial temperature range are the primary fit gates; the dual-rail supply architecture is the secondary check against your power tree.