128 KB FRAM — the non-volatile memory that writes like RAM
Its headline feature is 128 KB of FRAM program memory — non-volatile storage that combines the fast write speed and endurance of SRAM with the data retention of Flash, without requiring a separate EEPROM for configuration parameters. The 8K x 8 SRAM handles runtime data. This is the part to pick when your firmware needs frequent field updates or you want to log data without wearing out the memory array.
Industrial temperature range and peripheral set
The 40 GPIOs give headroom for parallel interfaces or a modest keypad-and-display panel.
48-VFQFN with exposed pad — rework and layout notes
Housed in a 48-VFQFN (7x7 mm) with an exposed thermal pad. The pad needs a solid via-stitch to the ground plane — without it, the junction temp climbs fast above 60°C ambient under sustained ADC conversions. For rework: preheat the board to 125°C, hit the QFN with hot air at 320°C, and lift the part once the solder flows uniformly. The pad is center-ground, so reflow alignment is forgiving, but check the orientation dot — it's small on this package. MSL 3 out of the bag; bake before reflow if the moisture barrier pouch has been open past the floor-life window.
Supply range and power budget
The FRAM technology draws near-zero standby current — the real power story is the active-mode current at 16 MHz, which stays under 300 µA typical in the family. That makes this MCU a strong candidate for battery-powered edge nodes where a 32-bit ARM would burn too much quiescent current.