MSP430FR2311IRGYR

Texas Instruments

Texas Instruments MSP430FR2311IRGYR, 16-bit MSP430™ FRAM MCU, 16 MHz, 3.75 KB FRAM, 1K x 8 SRAM, 12 I/O, I²C/SPI/UART, 8x10b ADC, -40°C~85°C, 16-VQFN (4x3.5 mm) exposed pad.

Texas Instruments MSP430FR2311IRGYR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MSP430FR2311IRGYR specifications
Parameter / AttributeSpecification / Value
SeriesMSP430™ FRAM
MountingSurface Mount
Oscillator typeInternal
Program memory typeFRAM
Voltage - supply (Vcc (Vdd))1.8V ~ 3.6V
Operating temperature-40°C~85°C(TA)
Speed16MHz
PackageTape & Reel (TR); Cut Tape (CT)
RAM size1K x 8
Core size16-Bit
PeripheralsBrown-out Detect/Reset, POR, PWM, WDT
ConnectivityI²C, IrDA, SCI, SPI, UART/USART
Number of i (O)12
Core processorMSP430 CPU16
Case16-VFQFN Exposed Pad
Data convertersA/D 8x10b
Program memory size3.75KB (3.75K x 8)

Technical details

16 MHz MSP430 FRAM MCU in a 16-VQFN — what the package and memory mean for the board

It packs 3.75 KB of FRAM program memory and 1 KB of SRAM, with 12 general-purpose I/O lines and an 8-channel 10-bit ADC. The part comes in a 16-VFQFN with exposed pad (supplier package 16-VQFN, 4x3.5 mm), surface-mount only. FRAM gives you non-volatile storage that writes at near-SRAM speed with essentially unlimited endurance—no wear-leveling needed for frequent data logging or configuration updates.

FRAM vs Flash — the endurance and write-speed advantage

Unlike conventional Flash-based MCUs, the FRAM program memory in this MSP430 handles write cycles orders of magnitude beyond typical Flash endurance—no sector-erase penalty, no wear-leveling firmware overhead. For a design that logs sensor data or updates calibration constants every cycle, FRAM eliminates the write-latency and endurance ceiling that Flash imposes. The 3.75 KB size suits small control loops, state machines, or communication protocol stacks where code fits in a few kilobytes.

Peripheral set and connectivity for sensor and interface nodes

MSP430FR2311IRGYR
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