GaN FET with integrated driver — 70 mOhm at 480 V
The Texas Instruments LMG3410R070RWHT is a GaN FET with an integrated gate driver and bootstrap circuit, configured as a single high-side load switch rated for 480 V maximum load voltage.
12 A output with integrated protection — overcurrent, overtemperature, UVLO
Fault protection includes overcurrent, overtemperature, and undervoltage lockout (UVLO), all integrated on-chip — no external comparator or sense resistor needed for basic fault handling. The 5 V regulated output from the bootstrap circuit can power a low-side gate driver or logic interface in a half-bridge topology. The PWM logic interface accepts non-inverting input signals, and the output is a P-channel configuration — the part switches the high side with a single PWM command. Supply voltage range is 9.5 V to 18 V on Vcc/Vdd, matching common 12 V and 15 V bias rails in industrial power stages.
ROHS3 compliant.