Dual low-side driver for N-channel MOSFETs
The Texas Instruments LM5110-1M/NOPB is a dual low-side gate driver designed for driving N-Channel MOSFETs. Each of the two independent, non-inverting channels delivers a peak output of 3A source and 5A sink, with typical rise and fall times of 14ns and 12ns respectively. Supply voltage spans 3.5V to 14V, covering both 5V and 12V gate drive rails common in industrial and automotive power stages. The part is housed in an 8-SOIC surface-mount package and rated for junction temperatures from -40°C to 125°C, making it suitable for motor drives, DC-DC converters, and other switched-mode power supplies operating in harsh environments.
Peak current and switching speed — what they mean for the power stage
The 3A source / 5A sink peak current rating is the headline spec for this driver. It determines how quickly the gate of a large N-channel MOSFET can be charged and discharged, directly impacting switching losses and dead-time requirements. With 14ns rise and 12ns fall times, the LM5110-1M/NOPB can drive moderate-to-large MOSFET gates at switching frequencies up to several hundred kilohertz without excessive cross-conduction or shoot-through. The asymmetric sink-to-source ratio (5A vs 3A) is typical for low-side drivers — faster turn-off reduces the Miller plateau duration and improves efficiency in hard-switching topologies.
Temperature grade and deployment context
Rated for -40°C to 125°C junction temperature, the LM5110-1M/NOPB suits industrial and automotive environments.
Lifecycle and sourcing reality
The NOPB suffix indicates ROHS3 compliance (lead-free). For a BOM freeze or production ramp, the active lifecycle removes the last-time-buy risk that haunts NRND or EOL parts.