Half-bridge driver for N-channel MOSFETs — what the ratings mean for your switching stage
The Texas Instruments LM25101CMYE/NOPB is a half-bridge gate driver designed to drive two N-channel MOSFETs in an independent, non-inverting configuration. It delivers 1A peak source and 1A peak sink current to the gate, with typical rise and fall times of 990ns and 715ns respectively. The high-side driver is powered via a bootstrap supply rated to 100V maximum, making it suitable for bus voltages up to that ceiling. The part operates over a -40°C to 125°C junction temperature range and accepts a supply voltage from 9V to 14V. It is housed in an 8-HVSSOP package and is ROHS3 compliant. Typical applications include half-bridge and full-bridge converters, motor drives, synchronous buck regulators, and class-D audio amplifiers where moderate switching speeds and a 100V high-side rail are adequate.
1A drive strength and 990ns rise time — where this fits and where it doesn't
The 1A peak output is a moderate drive current. It will charge the gate capacitance of small-to-mid-power MOSFETs in a few hundred nanoseconds, but for larger dies or higher switching frequencies, the 990ns rise time becomes a limiting factor.
Lifecycle and compliance — active production, no obsolescence risk
It is ROHS3 compliant. No last-time-buy or phase-out timeline has been announced.