DRV8300UDPWR

Texas Instruments · Automotive Series

Texas Instruments Automotive DRV8300UDPWR, 3-Phase Half-Bridge Gate Driver, N-Channel MOSFET, Inverting Input, 8.7V-20V Supply, 125V Bootstrap, 750mA/1.5A Peak, 24ns/12ns Rise/Fall, -40°C to 125°C, 20-TSSOP.

Texas Instruments DRV8300UDPWR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DRV8300UDPWR specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive
Gate typeN-Channel MOSFET
Input typeInverting
Channel type3-Phase
MountingSurface Mount
Supply voltage8.7V ~ 20V
Logic voltage - VIL, VIH0.8V, 2V
High side voltage - max (Bootstrap)125 V
Current - peak output (Source, sink)750mA, 1.5A
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case20-TSSOP (0.173\", 4.40mm Width)
Number of drivers3
Driven configurationHalf-Bridge
Rise (Fall time)24ns, 12ns

Technical details

The Texas Instruments DRV8300UDPWR is a three-phase half-bridge gate driver designed for N-channel MOSFETs in automotive and industrial motor-drive applications. It integrates three independent drivers with inverting input logic, handling supply rails from 8.7 V to 20 V and a bootstrap high-side voltage up to 125 V — enough for 100 V bus systems without an external level shifter.

Supply voltage and bootstrap — sizing the bus

The 8.7 V to 20 V supply range means this driver works directly off a standard automotive battery rail (12 V nominal) or a regulated 24 V industrial supply, as long as the input stays below the 20 V maximum. The bootstrap high-side voltage is rated to 125 V, which supports a 100 V DC bus with margin. If your system runs a 48 V or 72 V motor bus, the bootstrap diode and capacitor selection should follow the datasheet app note — the driver itself handles the voltage.

Temperature range and what it tells you

For an under-hood BLDC pump or an engine-cooling fan controller, this driver stays within spec across cold crank and hot soak. No AEC-Q grade is explicitly named in the listing, but the automotive series designation and temperature range align with typical AEC-Q100 Grade 1 parts.

Peak current and switching speed — matching the FET

With 750 mA source and 1.5 A sink peak, this driver can charge a typical 10 nC gate in about 13 ns (source) and discharge it in about 7 ns (sink), based on the 24 ns/12 ns rise/fall times. That is fast enough for switching frequencies up to several hundred kilohertz with medium-power MOSFETs (Q_g ~ 20-50 nC). For larger FETs with 100 nC+ gate charge, the rise time will stretch — budget the switching loss accordingly. The inverting input logic means a logic-low turns on the high-side FET, so the PWM polarity from the controller must match.

DRV8300UDPWR
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