Three-phase half-bridge driver for 12 V to 100 V motor rails
The Texas Instruments DRV8300UDIPWR is a three-phase half-bridge gate driver designed for N-channel MOSFETs in motor-drive and power-conversion stages. It drives two independent half-bridge channels with a peak source current of 750 mA and a peak sink current of 1.5 A, enough to charge and discharge the gate capacitance of medium-power MOSFETs in the 20 A to 40 A output range. The bootstrap high-side voltage is rated to 125 V, so the part handles 48 V and 72 V DC bus rails with margin, and the 8.7 V to 20 V supply range covers standard 12 V and 24 V industrial supplies. Typical rise and fall times are 24 ns and 12 ns respectively, which keeps cross-conduction losses manageable when the dead time is set correctly.
1.5 A peak sink — sizing the gate drive for your MOSFET
The 1.5 A peak sink current is the number to check against your MOSFET's total gate charge. A MOSFET with a 50 nC Qg at the chosen drive voltage will switch in roughly 33 ns with this driver, assuming a 1 Ω gate resistor and minimal PCB inductance. The 750 mA source peak is lower, so the turn-on edge is softer than turn-off — a natural asymmetry that helps control di/dt during turn-on without adding an external Schottky in parallel with the gate resistor. No level-shifting is needed when the MCU supply matches the driver's logic supply.
Package, footprint, and sourcing posture
The mounting is surface-mount, and the supplier device package is 20-TSSOP.