100-V three-phase gate driver for N-channel MOSFET bridges
The Texas Instruments DRV8300NPWR is a 100-V simple 3-phase gate driver for N-channel MOSFETs in a high-side and low-side configuration. It integrates three drivers, one per phase, each capable of 750 mA source and 1.5 A sink peak output current, with typical 12 ns rise and fall times. The bootstrap supply rides on up to 105 V. Supply range is 5 V to 20 V, and the part operates across -40°C to 125°C ambient.
Peak current and switching speed — what they mean for the bridge
The 1.5 A sink peak handles gate charge. The 12 ns rise and fall (typ) set a practical lower bound on dead-time. At 750 mA source, the driver can charge a gate.
Bootstrap voltage and supply range
The high-side bootstrap is rated to 105 V maximum. The logic input thresholds are TTL/CMOS compatible at 0.8 V (VIL) and 2 V (VIH), accepting both inverting and non-inverting input signals per phase.
Package and mounting — 20-TSSOP constraints
The DRV8300NPWR is supplied in a 20-TSSOP (4.40 mm width, 0.173" body) surface-mount package. The thermal pad, if present per the package outline, should be connected to the PCB ground plane through multiple vias under the pad to keep junction temperature within the -40°C to 125°C operating range during full-load switching.
Lifecycle and sourcing posture
It is a current-production part suitable for new designs and BOM placement without last-time-buy risk. The 20-TSSOP package is available in Tape & Reel (TR) or Cut Tape (CT) options to match assembly-line feeder requirements.