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Texas Instruments CSD87384M

CSD87384M NexFET 30V 30A Half-Bridge MOSFET, 7.7mOhm Rds(on)

MPNCSD87384M
End of Life

Texas Instruments NexFET series, CSD87384M, dual N-channel half-bridge MOSFET, 30V Vdss, 30A Id, 7.7mOhm Rds(on) max at 25A, 8V, 9.2nC gate charge at 4.5V, 5-LGA package, -55°C to 150°C junction temperature.

$1.83Ref. price · indicative, final on quote
Packaging5-LGA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CSD87384M Technical Specifications
ParameterValue
SeriesNexFET™
FET type2 N-Channel (Half Bridge)
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C30A
Power - max8W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case5-LGA
Vgs(th) (Max) @ id1.9V @ 250µA
Rds on (Max) @ id, vgs7.7mOhm @ 25A, 8V
Gate charge (Qg) (Max) @ vgs9.2nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1150pF @ 15V

Product details

Half-bridge FET in a 5-LGA — what the 7.7 mOhm Rds(on) buys you

The CSD87384M: The 7.7 mOhm max on-resistance at 25 A with an 8 V gate drive sets the conduction loss floor for a synchronous buck or motor-drive output stage. The logic-level gate threshold (1.9 V max at 250 µA) and 9.2 nC gate charge at 4.5 V mean a 3.3 V PWM controller or a low-voltage gate driver can switch the FET fully on without a separate 10 V rail.

Junction temperature range and the 5-PTAB footprint

Input capacitance is 1150 pF at 15 V Vds — moderate for a 30 A device.

Sourced through independent distribution, the part is quoted to order against the BOM quantity.

Frequently asked questions

Can the CSD87384M handle 3.3 V logic-level gate drive?

Yes. The logic-level gate feature means the maximum gate threshold voltage is 1.9 V at 250 µA, and the 9.2 nC gate charge is specified at 4.5 V. A 3.3 V PWM output will fully enhance the FET, though the on-resistance will be slightly higher than the 7.7 mOhm figure at 8 V.