Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ CSD86330Q3D, dual N-channel half-bridge MOSFET, 25V Vdss, 20A continuous drain, 9.6 mOhm Rds(on) at 14A/8V, 6W max power, 8-LSON (3.3x3.3) package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Surface Mount |
| Drain to source voltage | 25V |
| Current - continuous drain (Id) @ 25°C | 20A |
| Power - max | 6W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Rds on (Max) @ id, vgs | 9.6mOhm @ 14A, 8V |
| Gate charge (Qg) (Max) @ vgs | 6.2nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 920pF @ 12.5V |
The 9.6 mOhm Rds(on) at 14A and 8V is specified at 25°C junction. The 6W package power limit means continuous 20A is only possible with aggressive thermal management.
No end-of-life notification has been issued.
