Texas Instruments NexFET™ series, CSD75208W1015T, dual P-Channel common-source MOSFET, 20V Vdss, 1.6A Id, 68mOhm Rds(on) at 4.5V, logic-level gate, 6-DSBGA (1x1.5mm), -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 P-Channel (Dual) Common Source |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 1.6A |
| Power - max | 750mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 6-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 68mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 410pF @ 10V |
At 1 A, I²R loss is about 68 mW per FET, well within the 750 mW package power limit. Input capacitance of 410 pF at 10 V drain-source gives a rough switching-loss estimate — at a few hundred kHz the crossover loss is manageable, but above 1 MHz a driver with higher peak current may be warranted.
The 150°C TJ(max) rating means the part can operate at high ambient temperatures with appropriate derating of the 1.6 A continuous current.
Maximum on-resistance is 68 mOhm at 1 A drain current with 4.5 V gate drive.
Yes. The logic-level gate threshold (max 1.1 V at 250 µA) allows direct drive from 1.8 V or 2.5 V GPIO, and the 1.6 A continuous rating covers most portable load currents. The 1x1.5 mm DSBGA footprint fits space-constrained designs.
Yes, it is ROHS3 compliant.