On-resistance and gate charge — what they mean for the BOM
Maximum on-resistance of 68 mOhm at 1 A with 4.5 V gate drive sets the conduction loss floor for a given load current. At 1 A, I²R loss is about 68 mW per FET, well within the 750 mW package power limit. Gate charge of 2.5 nC at 4.5 V is low enough that a GPIO pin can drive the gate directly in most low-frequency switching or load-switch applications; no dedicated gate-driver IC is needed. Input capacitance of 410 pF at 10 V drain-source gives a rough switching-loss estimate — at a few hundred kHz the crossover loss is manageable, but above 1 MHz a driver with higher peak current may be warranted.
Temperature range and environment
The junction temperature range of -55°C to 150°C covers military, automotive under-hood, and downhole environments. The 150°C TJ(max) rating means the part can operate at high ambient temperatures with appropriate derating of the 1.6 A continuous current.
Sourcing and lifecycle
The CSD75208W1015T is listed as Active with no NRND or EOL notice. Texas Instruments continues to manufacture the NexFET series, and the part is available through independent distribution.