CSD25484F4

Texas Instruments · FemtoFET™ Series

Texas Instruments FemtoFET™ series, P-Channel MOSFET, 20V Vdss, 2.5A continuous drain, 94mOhm Rds(on) at 8V gate drive, 3-PICOSTAR package, -55°C to 150°C junction temperature.

Texas Instruments CSD25484F4
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD25484F4 specifications
Parameter / AttributeSpecification / Value
SeriesFemtoFET™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 8V
Current - continuous drain (Id) @ 25°C2.5A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs-12V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs94mOhm @ 500mA, 8V
Gate charge (Qg) (Max) @ vgs1.42 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds230 pF @ 10 V

Technical details

Gate drive and threshold — what to expect

The CSD25484F4 specifies a maximum threshold voltage of 1.2 V at 250 µA drain current, and the drive voltage range runs from 1.8 V up to 8 V for achieving minimum on-resistance. That 1.8 V minimum drive means this part can be turned on by a 1.8 V logic rail, but the 94 mOhm Rds(on) figure is quoted at 8 V — expect higher resistance at lower gate drives. Gate charge is 1.42 nC at 4.5 V, so switching losses stay low in moderate-frequency applications like load switching or battery disconnect.

CSD25484F4
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