P-Channel power switch for tight spaces
The Texas Instruments CSD25402Q3A is a NexFET™ P-Channel MOSFET in an 8-VSONP (3x3.15) package — a compact footprint for load switching and battery protection in portable or space-constrained gear.
Conduction loss and drive voltage
Rds(on) is 8.9 mOhm maximum at Vgs = 4.5 V and Id = 10 A — that is the number to use for worst-case conduction loss in a 5 V or 3.3 V gate-drive rail. The part is specified for drive voltages as low as 1.8 V (minimum Rds(on) condition) and as high as 4.5 V (maximum Rds(on) condition), so it works with logic-level gate signals from a microcontroller or a dedicated gate driver. Gate charge is 9.7 nC at Vgs = 4.5 V, and input capacitance is 1790 pF at Vds = 10 V.