Texas Instruments NexFET™ series, CSD25202W15T, P-Channel MOSFET, 20V Vdss, 4A Id, 26mOhm Rds(on) at 4.5V, 9-DSBGA package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 9-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.05V @ 250µA |
| Rds on (Max) @ id, vgs | 26mOhm @ 2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 7.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1010 pF @ 10 V |
The CSD25202W15T specifies a drive voltage range from 1.8 V to 4.5 V for achieving rated Rds(on). At 1.8 V the on-resistance will be higher than the 26 mOhm figure quoted at 4.5 V.
The CSD25202W15T carries an Active product status and is ROHS3 compliant. No last-time-buy or obsolescence notice is on record.
Yes, the CSD25202W15T is ROHS3 compliant.