The maximum on-resistance is 175 mOhm at a gate-source voltage of 4.5 V and a drain current of 500 mA. The maximum gate threshold voltage is 1.2 V at 250 µA. Gate charge is 1.14 nC at 6 V, so switching losses are negligible at moderate frequencies — this part is not intended for high-speed power conversion but for DC load switching where the gate is driven at low kHz rates or simply held on.
CSD23381F4T P-Channel MOSFET, 12V, 2.3A, FemtoFET
MPNCSD23381F4T
End of Life
Texas Instruments FemtoFET™ CSD23381F4T, P-Channel MOSFET, 12V Vdss, 2.3A Id, 175mOhm Rds(on) at 4.5V, 1.2V Vgs(th), 3-PICOSTAR package, -55°C to 150°C.
$0.94Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
SeriesFemtoFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | FemtoFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 175mOhm @ 500mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 1.14 nC @ 6 V |
| Input capacitance (Ciss) (Max) @ vds | 236 pF @ 6 V |
Product details
Frequently asked questions
What is the Rds(on) and Vgs threshold of CSD23381F4T?
The maximum Rds(on) is 175 mOhm at 4.5 V gate drive and 500 mA drain current.
What is the closest pin-compatible alternative to CSD23381F4T?
No official pin-compatible replacement or second source is listed for the CSD23381F4T. For a dual-source option, you would need to qualify a similar-footprint P-channel MOSFET from another vendor, checking package dimensions and pinout against the 3-PICOSTAR.