Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ N-Channel MOSFET, 100 V Vdss, 14.4 A continuous drain at 25°C Ta, 59 mOhm Rds(on) at 5 A, 10 V, 5.6 nC gate charge, 6-WSON (2x2 mm) package.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 14.4A (Ta) |
| Power dissipation | 2.5W (Ta), 20.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 3.8V @ 250µA |
| Rds on (Max) @ id, vgs | 59mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 454 pF @ 50 V |
CSD19538Q2 total gate charge is 5.6 nC at 10 V; input capacitance (Ciss) is 454 pF at 50 V drain-source.
Power dissipation is rated 2.5 W at 25°C ambient (Ta) and 20.2 W at case temperature (Tc).
It is ROHS3 compliant. No official successor or second-source cross-reference is listed; the NexFET series is a TI proprietary trench process, so pin-compatible alternatives from other vendors would require a full qualification.
