100 V, 150 A NexFET in a TO-220
The TI CSD19535KCS is a 100 V, 150 A N-channel NexFET in a TO-220-3 through-hole package. It carries a 3.6 mOhm max Rds(on) at 100 A with 10 V gate drive, and a 101 nC gate charge at 10 V. The 175 °C junction rating and 300 W power dissipation (Tc) suit it for motor drives, DC-DC converters, and battery management in industrial or automotive environments.
Temperature range and package
Junction temperature spans -55 to 175 °C. The TO-220-3 package is standard for through-hole mounting on a heatsink; the tab is the drain. No special mounting hardware beyond a standard TO-220 insulator and thermal compound.
Lifecycle and sourcing posture
No LTB or EOL signals on this part.
