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Texas Instruments CSD19534KCS

CSD19534KCS MOSFET, N-Channel 100V 100A TO-220-3, 16.5mOhm

MPNCSD19534KCS
End of Life

Texas Instruments NexFET N-Channel Power MOSFET, CSD19534KCS, 100V Vdss, 100A Id, 16.5mOhm Rds(on) at 10V, TO-220-3 package, -55°C to 175°C junction range.

$1.53Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

CSD19534KCS Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation118W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.4V @ 250µA
Rds on (Max) @ id, vgs16.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1670 pF @ 50 V

Product details

100V, 100A in a TO-220-3 — the switching MOSFET for 48V rails and motor drives

It targets high-efficiency switching applications where conduction loss and thermal management are the primary constraints — 48V intermediate bus converters, DC motor drives, battery protection circuits, and power OR-ing stages.

16.5 mOhm at 10V — what the on-resistance means for the thermal budget

Rds(on) is specified at 16.5 mOhm maximum with a 30A drain current and 10V gate drive. At 100A load, the conduction loss calculates to 165W — well above the 118W package dissipation limit at the case, so the designer must derate current or add heatsinking. The 6V minimum drive voltage for rated Rds(on) allows operation from a standard 12V gate drive rail without a boost stage.

22.2 nC gate charge — switching efficiency without a monster driver

Total gate charge at 10V is 22.2 nC, and input capacitance Ciss is 1670 pF at 50V Vds. This combination keeps switching losses manageable at frequencies up to several hundred kilohertz — a 100 kHz hard-switched converter needs only about 2.2 mA average gate drive current, well within the capability of a standard half-bridge driver.

Frequently asked questions

What is the Rds(on) of CSD19534KCS at 10V?

The maximum Rds(on) is 16.5 mOhm at 30A drain current with 10V gate drive. This is the on-resistance figure used for conduction loss calculations in switching applications.

What is the gate charge of CSD19534KCS?

Total gate charge Qg is 22.2 nC at 10V gate drive. Input capacitance Ciss is 1670 pF at 50V drain-source voltage.