CSD19534KCS

Texas Instruments

Texas Instruments NexFET N-Channel Power MOSFET, CSD19534KCS, 100V Vdss, 100A Id, 16.5mOhm Rds(on) at 10V, TO-220-3 package, -55°C to 175°C junction range.

Texas Instruments CSD19534KCS
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Technical specifications

CSD19534KCS specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation118W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.4V @ 250µA
Rds on (Max) @ id, vgs16.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1670 pF @ 50 V

Technical details

100V, 100A in a TO-220-3 — the switching MOSFET for 48V rails and motor drives

It targets high-efficiency switching applications where conduction loss and thermal management are the primary constraints — 48V intermediate bus converters, DC motor drives, battery protection circuits, and power OR-ing stages.

16.5 mOhm at 10V — what the on-resistance means for the thermal budget

Rds(on) is specified at 16.5 mOhm maximum with a 30A drain current and 10V gate drive. At 100A load, the conduction loss calculates to 165W — well above the 118W package dissipation limit at the case, so the designer must derate current or add heatsinking. The 6V minimum drive voltage for rated Rds(on) allows operation from a standard 12V gate drive rail without a boost stage.

22.2 nC gate charge — switching efficiency without a monster driver

Total gate charge at 10V is 22.2 nC, and input capacitance Ciss is 1670 pF at 50V Vds.

CSD19534KCS
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