Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ N-Channel MOSFET, 80 V Drain-Source, 200 A Continuous Drain, 2.3 mOhm Rds(on) at 10 V, DDPAK/TO-263-3, -55 to 175 °C Junction.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 156 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 12200 pF @ 40 V |
The CSD19506KTT: Supplied in the D²Pak (TO-263-3) surface-mount package, three leads plus the drain tab. The supplier device package is DDPAK/TO-263-3.
TI lists the CSD19506KTT as Active with ROHS3 compliance.
