Texas Instruments NexFET™ N-Channel MOSFET, 80 V Drain-Source, 200 A Continuous Drain, 2.3 mOhm Rds(on) at 10 V, DDPAK/TO-263-3, -55 to 175 °C Junction.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 156 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 12200 pF @ 40 V |
The CSD19506KTT: Supplied in the D²Pak (TO-263-3) surface-mount package, three leads plus the drain tab. The supplier device package is DDPAK/TO-263-3.
TI lists the CSD19506KTT as Active with ROHS3 compliance.
The 2.3 mOhm Rds(on) is specified at 10 V gate drive; the drive voltage range for achieving rated performance is 6 V to 10 V. A 5 V gate signal will not fully enhance the channel — expect higher on-resistance. Gate charge is 156 nC at 10 V.
The threshold voltage maximum is 3.2 V at 250 µA, so the device will turn on with 5 V. However, the rated Rds(on) of 2.3 mOhm is guaranteed at 10 V drive. At 5 V the on-resistance will be significantly higher — review the typical Rds(on) vs Vgs curve in the datasheet for the exact value at your operating current.
Within TI's NexFET portfolio, parts with similar 80 V–100 V ratings in the D²Pak footprint are potential drop-in candidates. No single official second-source MPN is listed on the record for this part. For a pin-compatible cross, compare Rds(on), gate charge, and package footprint (DDPAK/TO-263-3) against other 80 V NexFET devices in the same package.