80 V, 2.3 mOhm — the conduction-loss floor for high-current switching
The Texas Instruments CSD19506KCS is an 80 V N-channel NexFET power MOSFET in a TO-220-3 through-hole package.
156 nC gate charge — sizing the driver for fast edges
Total gate charge is 156 nC at a 10 V gate drive. This is a high-Qg device: a 100 kHz switching frequency would demand roughly 15.6 mA average gate-drive current, and the driver must source a peak current well above that to achieve clean Miller-plateau transitions. The 12200 pF input capacitance at 40 V drain-source reinforces the need for a robust gate-drive circuit.
The 375 W power dissipation rating at the case assumes proper heatsinking — the TO-220 tab is the primary thermal path. In a 100 A design, even 2.3 mOhm produces 23 W of conduction loss at full current, so the thermal budget must be calculated against the 175°C Tj max.
Active lifecycle and compliance
It is ROHS3 compliant.